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INFRARED EMITTING DIODES BL-L813XX-IR
Features:
8.0mm Round Type Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available IC compatible /Low current capability.
Application
Free air transmission system Infrared remote control units with high power requirement Smoke detector Infrared Camera Infrared applied system
Electrical-optical characteristics: (Ta=25 C)
Chip Part Number Material P (nm)
(Test Condition: IF=50mA)
Lens Type
Ir (Vr=5V,
BL-L813IRAC BL-L813IRAB BL-L813IRBC BL-L813IRBB BL-L813IRCC BL-L813IRCB BL-L813IRCY
GaAs GaAs
940 940
Water Clear Blue Trans.
GaAlAs GaAlAs GaAlAs GaAlAs GaAlAs
Absolute maximum ratings (Ta=25 C)
Parameter Forward Current IF Power Dissipation Pd Reverse Voltage VR Peak Forward Current IPF (Duty 1/10 @1KHZ) Operation Temperature TOPR Storage Temperature TSTG Lead Soldering Temperature TSOL Rating 50 150 5 250 -40 to +80 -40 to +85 Max.260 5 for 3 sec Max. (1.6mm from the base of the epoxy bulb) Unit
mA mW V mA
w
. w w
880 880 850 850 850
Water Clear Blue Trans.
lu t e b
50 10 50 10 50 10 50 10 50 50 50 10 10 10
uA)
. x
Typ 1.40 1.40 1.70 1.70 1.70 1.70 1.70
Forward Voltage(VF) Unit:V
m o c
Radiant Power (mw/sr) Typ 20 20 20 20 30 30 30
Viewing
Angle 21/2(deg)
Max
1.60 1.60 2.00 2.00 2.00 2.00 2.00
30
Water Clear Blue Trans.
Yellow Trans.
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INFRARED EMITTING DIODES BL-L813XX-IR
w
. w w
Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is 0.25(0.01")unless otherwise noted. 3. Specifications are subject to change without notice.
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(c) |
(c) |
Package configuration & Internal circuit diagram
lu t e b
. x
m o c
INFRARED EMITTING DIODES BL-L813XX-IR
1.0
0.5
0 350
(1) - GaAsP/GaAs 655nm/Red (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow (4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red (6) - GaAlAs/GaAs 660nm/Super Red (8) - GaAsP/GaP 610nm/Super Red
(9) - GaAlAs 880nm (10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (B) - InGaN/SiC 470nm/Blue (C) - InGaN/SiC 505nm/Ultra Green (D) - InGaAl/SiC 525nm/Ultra Green
50 FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY 3 2 1 0.5 0.2 0.1 -30 -20 -10
1
8 64 5
23
4.0
40 30 20 10 0 1.2
3.0
1.6
2.0
2.4
2.6
FORWARD VOLTAGE (Vf) FORWARD CURRENT VS. FORWARD VOLTAGE
w
0 10
FORWARD CURRENT (mA) RELATIVE LUMINOUS INTENSITY VS. FORWARD CURRENT
AMBIENT TEMPERATURE Ta( ) FORWARD CURRENT VS. AMBIENT TEMPERATURE
1 5 4 2 3
10 9 8 7 6 5 4 3 2 20 30 40 50 60 70 1 1 Ipeak MAX. IDC MAX.
300KHz 3KHz 10KHz 1KHz 100KHz F-REFRESH RATE
3KHz 300Hz 30KHz 100KHz 10KHz 1KHz 100Hz 10 9 8 7 6 5 Ipeak MAX. IDC MAX. 4 3 2 1 1 10 100 1000 tp-PULSE DURATION uS (5)
AMBIENT TEMPERATURE Ta( )
10
100
1000
10,000
tp-PULSE DURATION uS (1,2,3,4,6,8,B.D.J.K) NOTE:25
free air temperature unless otherwise specified
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e .b w w
2.0 1.0 0 3.0 20 40 60
lu t
1 5 B 100
80

Typical electrical-optical characteristics curves:
(A) (B) (C) (D) (2) (3) (8) (4) (1) (6) (5) (9) (10)
400
450
500
550
600
650
700
750
800
850
900
950
1000
Wavelength(nm) RELATIVE INTENSITY Vs WAVELENGTH( p )
. x
50 40 30 20 10 0 FORWARD CURRENT(mA)
m o c
20 40 60 80 100
RELATIVE LUMINOUS INTENSITY
1
6 2,4,8,A 3 5
10,000

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